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BAEK, ROCK HYUN(백록현) scopus

Department: Dept of Electrical Engineering(전자전기공학과)

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Publication & Time Cited Count (For the Last 5 years)

Results 1-9 of 9 (Search time: 0.001 seconds).

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Article

Process-Induced Variations of 10-nm Node Bulk nFinFETs Considering Middle-of-Line ParasiticsSCIESCOPUS

IEEE Transactions on Electron Devices, vol. 63, no. 9, page. 3399 - 3405, 2016-09

Article

Investigation of RC Parasitics Considering Middle-of-the-Line in Si-Bulk FinFETs for Sub-14-nm Node Logic ApplicationsSCIESCOPUS

IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 62, no. 10, page. 3441 - 3444, 2015-10

Article

Junction Design Strategy for Si Bulk FinFETs for System-on-Chip Applications Down to the 7-nm NodeSCIESCOPUS

IEEE ELECTRON DEVICE LETTERS, vol. 36, no. 10, page. 994 - 996, 2015-10

Article

Device Design Guidelines for Nanoscale FinFETs in RF/Analog ApplicationsSCIESCOPUS

IEEE ELECTRON DEVICE LETTERS, vol. 33, no. 9, page. 1234 - 1236, 2012-09

Article

Electrical characteristics of 20-nm junctionless Si nanowire transistorsSCIESCOPUS

Solid State Electronics, vol. 73, page. 7 - 10, 2012-07

Article

Characterization and Modeling of 1/f Noise in Si-nanowire FETs: Effects of Cylindrical Geometry and Different Processing of OxidesSCIESCOPUS

IEEE TRANSACTIONS ON NANOTECHNOLOGY, vol. 10, no. 3, page. 417 - 423, 2011-05

Article

C-V Characteristics in Undoped Gate-All-Around Nanowire FET ArraySCIESCOPUS

IEEE Electron Device Letters, vol. 32, no. 2, page. 116 - 118, 2011-02

Article

Comparison of Series Resistance and Mobility Degradation Extracted from n- and p-Type Si-Nanowire Field Effect Transistors Using the Y-Function TechniqueSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 49, no. 4, page. 4DN06-01 - 4DN06-05, 2010-04

Article

Characteristics of the Series Resistance Extracted From Si Nanowire FETs Using the Y-Function TechniqueSCIESCOPUS

IEEE TRANSACTIONS ON NANOTECHNOLOGY, vol. 9, no. 2, page. 212 - 217, 2010-03

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