Comparison of Series Resistance and Mobility Degradation Extracted from n- and p-Type Si-Nanowire Field Effect Transistors Using the Y-Function Technique

Abstract

The series resistance Rsd and the electron and hole mobilities, extracted from n- and p-type Si-nanowire field effect transitors (Si-NWFETs) using the Y-function technique are compared. Both n- and p-NWFETs show similar Rsd values but n-NWFETs have larger Rsd variation from device to device than p-NWFETs. Also, compared with n-NWFETs, p-NWFETs exhibit higher low-field mobility mu(0) but severe mobility degradation, regardless of channel length in the high gate voltage V-gs region. With decreasing channel length and increasing lateral electric field for a given drain voltage, n-NWFETs exhibit low-field mobility (mu(0)) degradation resulting from the velocity saturation. In contrast, the hole mobility in p-NWFETs remains nearly constant and is consistant with its larger critical electric field, E-c. (C) 2010 The Japan Society of Applied Physics