Comparison of Series Resistance and Mobility Degradation Extracted from n- and p-Type Si-Nanowire Field Effect Transistors Using the Y-Function Technique
SCIE
SCOPUS
- Title
- Comparison of Series Resistance and Mobility Degradation Extracted from n- and p-Type Si-Nanowire Field Effect Transistors Using the Y-Function Technique
- Authors
- Baek, RH; BAEK, CHANG KI; Jung, SW; Yeoh, YY; Kim, DW; LEE, JEONG SOO; Kim, DM; JEONG, YOON HA
- Date Issued
- 2010-04
- Publisher
- The Japan society of applied physics
- Abstract
- The series resistance Rsd and the electron and hole mobilities, extracted from n- and p-type Si-nanowire field effect transitors (Si-NWFETs) using the Y-function technique are compared. Both n- and p-NWFETs show similar Rsd values but n-NWFETs have larger Rsd variation from device to device than p-NWFETs. Also, compared with n-NWFETs, p-NWFETs exhibit higher low-field mobility mu(0) but severe mobility degradation, regardless of channel length in the high gate voltage V-gs region. With decreasing channel length and increasing lateral electric field for a given drain voltage, n-NWFETs exhibit low-field mobility (mu(0)) degradation resulting from the velocity saturation. In contrast, the hole mobility in p-NWFETs remains nearly constant and is consistant with its larger critical electric field, E-c. (C) 2010 The Japan Society of Applied Physics
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/13717
- DOI
- 10.1143/JJAP.49.04DN06
- ISSN
- 0021-4922
- Article Type
- Article
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 49, no. 4, page. 4DN06-01 - 4DN06-05, 2010-04
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.