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CHUNG, SUK MIN (정석민)

Dept of Physics(물리학과)

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ADSORPTION:4||SURFACE:4||PERFORMANCE:3||STAINLESSSTEEL:3||stainless steel:3||GROWTH:3||RESONANT PHOTOEMISSION:2||photoemission spectroscopy:2||XPS:2||SPECTROSCOPY:2||STATES:2||PHOTOEMISSION:2||synchrotron radiation photoelectron spectroscopy:2||EXTREME HIGHVACUUM:2||SYSTEM:2||ELECTRONICS:2||MICROSCOPY:2||VACUUM:2||MEMORY DEVICES:2||LITHOGRAPHY:2||HIGHVACUUM:2||oxidation:2||FILMS:2||CR:2||THINFILMS:2||POLYIMIDE:2||Photoelectron spectroscopy:1||SENSITIZED SOLARCELLS:1||photoemission electron microscope:1||passive chromium oxide thin film:1||ELECTRONICSTRUCTURE:1||STORAGERINGS:1||DEUTERIUM:1||LEVEL:1||soft Xray:1||PES:1||SPEM:1||MONOHYDRIDE:1||Atomsolid interactions:1||Oxidation of aluminum:1||LASER:1||thermophysical properties of gases:1||OXIDATION:1||FECR ALLOYS:1||LAYER:1||OXIDE:1||THINFILM TRANSISTORS:1||pentacene:1||ammonia:1||silicon nitride:1||SILICON:1||extremely high vacuum:1||HYDROGEN:1||EXCITATION:1||microwave instability:1||Synchrotron radiation based photoemission spectroscopy:1||AgSi bonds:1||DIFFUSION:1||Near edge extended Xray absorption fine structure (NEXAFS):1||Photovoltaic:1||ELECTRODES:1||DEVICES:1||SPECTRA:1||INVERSEPHOTOEMISSION:1||DISSOCIATION:1||beamline:1||CORELEVEL SPECTROSCOPY:1||CHARGETRANSFER:1||combination pumping:1||resistless lithography:1||SI(001) SURFACES:1||Si(111)1 x 1H surface:1||Low energy electron diffraction:1||ATOMICHYDROGEN:1||FABRICATION:1||vacuum sensor:1||spectroscopy:1||thermal desorption spectroscopy:1||Gd metal overlayers:1||TORR:1||adsorption:1||SI(100) SURFACE:1||X1):1||ABSORPTION:1||PSD:1||EUV:1||Silver atoms:1||SCIENCE:1||ARRAYS:1||Adsorption kinetics:1||Water:1||Pentacene:1||MODEL:1||PASSIVATION:1||OXIDES:1||ION INSTABILITY:1||AIR:1||PERMEATION:1||synchrotron radiation photoelectron:1||SILICON INTERFACES:1||NOBLEMETAL ALLOYS:1||GAUGE:1||metal contact:1||scanning tunneling microscopy:1||UHVSTM:1||MOLECULAR NANOSTRUCTURES:1||INTERFACE:1||FIELDEFFECT TRANSISTORS:1||Xray spectroscopy:1||CR2O3:1||OUTGASSING REDUCTION:1||atomsolid interactions:1||water:1||Schottky barrier:1||EU:1||GRAPHITE:1||SI(100) SURFACES:1||bunch lengthening:1||potential well distortion:1||broadband impedance:1||SILVER:1||POLYACENES:1||Graphene:1||Ebeam:1||Peltier tip calorimeter:1||PHOTOELECTRONSPECTROSCOPY:1||coatings:1||ULTIMATE PRESSURE:1||silicon:1||bending magnet:1||HYDROGEN OUTGASSING RATE:1||turbomolecular pump (TMP):1||SCANNINGTUNNELINGMICROSCOPY:1||Synchrotron radiation photoelectron spectroscopy:1||MOBILITY:1||TRANSPARENT:1||chromium oxide:1||ALUMINUM:1||GaAs(110) surface:1||chemical reaction:1||CHAMBER:1||BAKEABLETYPE CRYOPUMP:1||electronic structures:1||Xray absorption:1||

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