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JE, JUNG HO(제정호) scopus

Department: Dept of Materials Science & Engineering(신소재공학과)

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Author : Argunova, TS

Article

Study of a Macrodefect in a Silicon Carbid Single Crystal by Means of X-Ray Phase ContrastSCIESCOPUS

CRYSTALLOGRAPHY REPORTS, vol. 61, no. 6, page. 914 - 917, 2016-11

Article

Capsule-like voids in SiC single crystal: Phase contrast imaging and computer simulationsSCIESCOPUS

AIP ADVANCES, vol. 4, no. 9, 2014-09

Article

Structural transformation of lattice defects in free-spreading growth of bulk SiC crystalsSCIESCOPUS

CRYSTENGCOMM, vol. 16, no. 37, page. 8917 - 8923, 2014-01

Article

Si1-xGex single crystals grown by the Czochralski method: Defects and electrical propertiesSCIESCOPUS

Acta Physica Polonica A, vol. 124, no. 2, page. 239 - 243, 2013-08

Article

On the cause of a contrast change in the SR images of micropipes in SiCSCIESCOPUS

Journal of Surface Investigation, vol. 6, no. 5, page. 840 - 844, 2012-09

Article

Contact-free reactions between micropipes in bulk SiC growthSCIESCOPUS

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, vol. 209, no. 8, page. 1432 - 1437, 2012-08

Article

SR phase contrast imaging to address the evolution of defects during SiC growthSCIESCOPUS

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, vol. 208, no. 4, page. 819 - 824, 2011-04

Article

Features in Phase-Contrast Images of Micropipes in SiC in White Synchrotron Radiation BeamSCIESCOPUS

JOURNAL OF SURFACE INVESTIGATION-X-RAY SYNCHROTRON AND NEUTRON TECHNIQUES, vol. 5, no. 1, page. 1 - 6, 2011-02

Article

Far-field x-ray phase contrast imaging has no detailed information on the objectSCIESCOPUS

JOURNAL OF PHYSICS D-APPLIED PHYSICS, vol. 43, no. 44, 2010-11-10

Article

Structural and Electrical Properties of SiGe-on-Insulator Substrates Fabricated by Direct BondingSCIESCOPUS

SEMICONDUCTORS, vol. 44, no. 8, page. 1101 - 1105, 2010-08

Article

Crack-free interface in wafer-bonded Ge/Si by patterned groovesSCIESCOPUS

SCRIPTA MATERIALIA, vol. 62, no. 6, page. 407 - 410, 2010-03

Article

Micropipe absorption mechanism of pore growth at foreign polytype boundaries in SiC crystalsSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 106, no. 12, page. 123515 - 123515, 2009-12-15

Article

Investigation of dislocations in Czochralski grown Si1-xGex single crystalsSCIESCOPUS

JOURNAL OF PHYSICS D-APPLIED PHYSICS, vol. 42, no. 8, 2009-04-21

Article

Computer Simulation of Phase-Contrast Images in White Synchrotron Radiation Using Micropipes in Silicon CarbideSCIESCOPUS

JOURNAL OF SURFACE INVESTIGATION-X-RAY SYNCHROTRON AND NEUTRON TECHNIQUES, vol. 2, no. 6, page. 861 - 865, 2008-12

Article

Current-voltage characteristics of Si/Si1-x Ge (x) heterodiodes fabricated by direct bondingSCIESCOPUS

TECHNICAL PHYSICS LETTERS, vol. 34, no. 12, page. 1027 - 1029, 2008-12

Article

APPLIED PHYSICS LETTERS, vol. 93, no. 15, 2008-10-13

Article

X-ray diffractometry and topography of lattice plane curvature in thermally deformed Si waferSCIESCOPUS

JOURNAL OF SYNCHROTRON RADIATION, vol. 15, page. 96 - 99, 2008-01

Article

Study of micropipe structure in SiC by x-ray phase contrast imagingSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 91, no. 17, 2007-10-22

Article

White X-ray beam topography and radiography of Si1-xGex crystals bonded to siliconSCIESCOPUS

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, vol. 204, no. 8, page. 2669 - 2674, 2007-08

Article

Role of micropipes in the formation of pores at foreign polytype boundaries in SiC crystalsSCIESCOPUS

PHYSICAL REVIEW B, vol. 76, no. 6, 2007-08

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