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Investigation of dislocations in Czochralski grown Si1-xGex single crystals

Title
Investigation of dislocations in Czochralski grown Si1-xGex single crystals
Authors
Argunova, TSJung, JWJe, JHAbrosimov, NVGrekhov, IVKostina, LSRozhkov, AVSorokin, LMZabrodskii, AG
POSTECH Authors
Je, JH
Date Issued
Apr-2009
Publisher
IOP PUBLISHING LTD
Keywords
ELECTRICAL-PROPERTIES; X-RAY; SIGE; DEFECTS; TRANSISTORS; TECHNOLOGY; TOPOGRAPHY; MOSFETS; SILICON
URI
http://oasis.postech.ac.kr/handle/2014.oak/28601
DOI
10.1088/0022-3727/42/8/085404
ISSN
0022-3727
Article Type
Article
Citation
JOURNAL OF PHYSICS D-APPLIED PHYSICS, vol. 42, no. 8, 2009-04
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제정호JE, JUNG HO
Dept of Materials Science & Enginrg
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