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LEE, JONG LAM(이종람) researcherid scopus

Department: Dept of Materials Science & Engineering(신소재공학과)

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Publication & Time Cited Count (For the Last 5 years)

Results 181-200 of 356 (Search time: 0.002 seconds).

Article

Highly efficient organic light-emitting diodes with hole injection layer of transition metal oxidesSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 98, no. 9, 2005-11-01

Article

Enhancement of electroluminescence in GaN-based light-emitting diodes using an efficient current blocking layerSCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 23, no. 6, page. 2284 - 2287, 2005-11

Article

High-performance organic light emitting diodes fabricated with a ruthenium oxide hole injection layerSCIESCOPUSKCI

METALS AND MATERIALS INTERNATIONAL, vol. 11, no. 5, page. 411 - 414, 2005-10

Article

Enhancement of electron injection in inverted top-emitting organic light-emitting diodes using an insulating magnesium oxide buffer layerSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 87, no. 8, 2005-08-22

Article

Rhodium-oxide-coated indium tin oxide for enhancement of hole injection in organic light emitting diodesSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 87, no. 7, 2005-08-15

Article

Fabrication of (Ga,Mn)N nanowires with room temperature ferromagnetism using nitrogen plasmaSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 87, no. 4, 2005-07-25

Article

ENHANCED HOLE INJECTIONS IN ORGANIC LIGHT EMITTING DIODES USING RHODIUM OXIDE COATED ANODE

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, vol. 5, no. 2, page. 77 - 82, 2005-05

Article

Control of the electrical and adhesion properties of metal/organic interfaces with self-assembled monolayersSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 86, no. 17, 2005-04-25

Article

Effects of tensile stress induced by silicon nitride passivation on electrical characteristics of AlGaN/GaN heterostructure field-effect transistorsSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 86, no. 17, 2005-04-25

Article

Enhancement of hole injection using iridium-oxide-coated indium tin oxide anodes in organic light-emitting diodesSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 86, no. 13, 2005-03-28

Article

Fermi level pinning on Si0.83Ge0.17 surface by inductively coupled plasma treatmentSCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 23, no. 2, page. 495 - 498, 2005-03

Article

Ferromagnetic properties of (Ga,Mn)N nanowires grown by a chemical vapor deposition methodSCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 23, no. 2, page. 530 - 533, 2005-03

Article

Enhancement of hole injection using O-2 plasma-treated Ag anode for top-emitting organic light-emitting diodesSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 86, no. 1, 2005-01-03

Article

Investigation of Ta/Ti/Al/Ni/Au ohmic contact to AlGaN/GaN heterostructure field-effect transistorSCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 23, no. 1, page. 322 - 326, 2005-01

Article

DIRECT EVIDENCE OF HOLE INJECTION ENHANCED BY O3 PLASMA TREATMENT ON INDIUM TIN OXDE

ELECTRONIC MATERIALS LETTERS, vol. 1, no. 1, page. 59 - 62, 2005-01

Article

Determination of interface dipole energy at the interface of ruthenium-oxide-coated anode with organic material using synchrotron radiation photoemission spectroscopySCIESCOPUS

ELECTROCHEMICAL AND SOLID STATE LETTERS, vol. 8, no. 9, page. H79 - H81, 2005-01

Article

Effects of implanted nitrogen on the microstructural, optical, and magnetic properties of Mn-implanted GaNSCIESCOPUS

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 152, no. 8, page. G608 - G612, 2005-01

Article

Mechanism for ohmic contact formation of Ni/Ag contacts on p-type GaNSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 85, no. 24, page. 5920 - 5922, 2004-12-13

Article

Microstructural and optical properties of ferromagnetic (Ga,Mn)N semiconductorSCIESCOPUSKCI

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 45, page. S605 - S608, 2004-12

Article

Comparative study on AlGaN/GaN HFETs and MIS-HFETsSCIESCOPUSKCI

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 45, page. S898 - S901, 2004-12

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