Enhancement of electroluminescence in GaN-based light-emitting diodes using an efficient current blocking layer
SCIE
SCOPUS
- Title
- Enhancement of electroluminescence in GaN-based light-emitting diodes using an efficient current blocking layer
- Authors
- Jang, HW; Lee, JL
- Date Issued
- 2005-11
- Publisher
- A V S AMER INST PHYSICS
- Abstract
- Enhancement of electroluminescence in GaN-based light-emitting diodes (LEDs) was achieved using an efficient current blocking layer formed by postannealing, When a LED chip with Ni/Au pad on Ni/Au transparent p contact was annealed at 500 degrees C, the electroluminescence of the LED chip increased by 55%. The specific contact resistivity of metal contact below the p pad significantly increased due to indiffusion of Au and Ni atoms from the p pad to the contact interfacial region. As a result, an efficient current blocking layer could be formed below the p pad, enhancing the light output and decreasing the reverse leakage current of the LED chip, This result suggests that a further increase in the extraction efficiency of GaN-based LEDs can be easily obtained using the postannealing. (c) 2005 American Vacuum Society.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/11276
- DOI
- 10.1116/1.2083931
- ISSN
- 1071-1023
- Article Type
- Article
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 23, no. 6, page. 2284 - 2287, 2005-11
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