Microstructural and optical properties of ferromagnetic (Ga,Mn)N semiconductor
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- Title
- Microstructural and optical properties of ferromagnetic (Ga,Mn)N semiconductor
- Authors
- Baik, JM; Lee, JL; Shon, Y; Kang, TW
- Date Issued
- 2004-12
- Publisher
- KOREAN PHYSICAL SOC
- Abstract
- N and Mn ions were co-implanted into p-type GaN and subsequently annealed at 700 - 900 degreesC. Compared with the Mn-implanted sample, the (Mn+N)-implanted sample revealed a larger ferromagnetic signal. The intensity of the Mn-related photoluminescence peak increased as N ions were implanted, indicating an increase in hole concentration due to an enhanced activation of Mn impurities in p-type GaN. From Raman spectra, a compressive stress was induced in the (Mn+N)implanted GaN, meaning that the concentration of Mn ions that occupied Ga sites increased, resulting in the reduction of Mn-N compounds such as Mn6N2.58. As a result, the N-vacancies reduced and net hole concentration increased, leading to the enhancement of the ferromagnetic property.
- Keywords
- diluted magnetic semiconductors; GaMnN; Raman; PL; MOLECULAR-BEAM EPITAXY; P-TYPE GAN; ROOM-TEMPERATURE; MN; SAPPHIRE; FILMS; GAAS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/24842
- ISSN
- 0374-4884
- Article Type
- Article
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 45, page. S605 - S608, 2004-12
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