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LEE, JONG LAM(이종람) researcherid scopus

Department: Dept of Materials Science & Engineering(신소재공학과)

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Subject : LAYER Subject : LAYER Date Issued : [2000 TO 2009]

Article

Enhancement of electrical property by oxygen doping to copper phthalocyanine in inverted top emitting organic light emitting diodesSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 95, no. 21, page. 213307 - 213307, 2009-11-23

Article

Correlation Between Charge Injection and Charge Balance in Organic Light Emitting Diodes Using LiF and IrOx InterlayersSCIESCOPUS

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 156, no. 4, page. J57 - J61, 2009-01

Article

In Situ Analysis of Hole Injection Barrier of Molybdenum-Oxide-Coated Anode with Organic Materials Using Synchrotron Radiation Photoemission SpectroscopySCIESCOPUS

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 156, no. 8, page. H648 - H653, 2009-01

Article

Oxygen-plasma-treated indium-tin-oxide films on nonalkali glass deposited by super density arc plasma ion platingSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 47, no. 2, page. 862 - 866, 2008-02

Article

Inverted top-emitting organic light-emitting diodes using transparent silver oxide anode formed by oxygen plasmaSCIESCOPUS

ELECTROCHEMICAL AND SOLID STATE LETTERS, vol. 11, no. 2, page. H29 - H31, 2008-01

Article

Enhancement of physical properties of indium tin oxide deposited by super density arc plasma ion plating by O-2 plasma treatmentSCIESCOPUS

SOLID-STATE ELECTRONICS, vol. 52, no. 1, page. 1 - 6, 2008-01

Article

Rhodium-oxide-coated indium tin oxide for enhancement of hole injection in organic light emitting diodesSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 87, no. 7, 2005-08-15

Article

Mechanism for the increase of indium-tin-oxide work function by O-2 inductively coupled plasma treatmentSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 95, no. 2, page. 586 - 590, 2004-01-15

Article

Catalytic role of Au in Ni/Au contact on GaN(0001)SCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 78, no. 24, page. 3773 - 3775, 2001-06-11

Article

AlGaAs/InGaAs pseudomorphic high electron mobility transistor using Pd/Ge ohmic contactSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, vol. 40, no. 3A, page. 1188 - 1193, 2001-03

Article

High-temperature structural behavior of Ni/Au contact on GaN (0001)SCIESCOPUS

MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, vol. 6, no. 4, page. 1 - 7, 2001-01

Article

Ohmic contact formation mechanism of Pd nonalloyed contacts on p-type GaNSCIESCOPUS

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 147, no. 6, page. 2297 - 2302, 2000-06

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