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LEE, JONG LAM(이종람) researcherid scopus

Department: Dept of Materials Science & Engineering(신소재공학과)

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Results 21-32 of 32 (Search time: 0.002 seconds).

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Author : 576 Date Issued : [2000 TO 2009]

Article

Catalytic role of Au in Ni/Au contact on GaN(0001)SCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 78, no. 24, page. 3773 - 3775, 2001-06-11

Article

Room-temperature Ohmic contact on n-type GaN with surface treatment using Cl-2 inductively coupled plasmaSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 78, no. 14, page. 2015 - 2017, 2001-04-02

Article

Effects of surface treatment using aqua regia solution on the change of surface band bending of p-type GaNSCIESCOPUS

JOURNAL OF ELECTRONIC MATERIALS, vol. 30, no. 3, page. 129 - 133, 2001-03

Article

Effects of surface treatments on the electrical and the microstructural changes of Pd contact an p-type GaNSCIESCOPUS

JOURNAL OF ELECTRONIC MATERIALS, vol. 30, no. 3, page. 170 - 174, 2001-03

Article

Microstructural and electrical investigation of Ni/Au ohmic contact on p-type GaNSCIESCOPUS

JOURNAL OF ELECTRONIC MATERIALS, vol. 30, no. 2, page. L8 - L12, 2001-02

Article

High-temperature structural behavior of Ni/Au contact on GaN (0001)SCIESCOPUS

MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, vol. 6, no. 4, page. 1 - 7, 2001-01

Article

Room Temperature Ohmic contact on n-type GaN using plasma treatmentSCIESCOPUS

MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, vol. 6, no. 8, page. 1 - 7, 2001-01

Article

Microstructural investigation of Ni/Au ohmic contact on p-type GaNSCIESCOPUS

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 147, no. 12, page. 4645 - 4651, 2000-12

Article

Pretreatment effects by aqua-regia solution on field emission of diamond filmSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 76, no. 25, page. 3694 - 3696, 2000-06-19

Article

Ohmic contact formation mechanism of Pd nonalloyed contacts on p-type GaNSCIESCOPUS

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 147, no. 6, page. 2297 - 2302, 2000-06

Article

3.3V supply single-voltage-operating double-planar-doped AlGaAs/InGaAs PHEMT with double channel for 1.6GHz digital mobile communicationsSCIESCOPUS

ELECTRONICS LETTERS, vol. 36, no. 3, page. 262 - 264, 2000-02-03

Article

Transparent Pt ohmic contact on p-type GaN with low resistivity using (NH4)(2)S-x treatmentSCIESCOPUS

ELECTROCHEMICAL AND SOLID STATE LETTERS, vol. 3, no. 1, page. 53 - 55, 2000-01

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