Microstructural and electrical investigation of Ni/Au ohmic contact on p-type GaN
SCIE
SCOPUS
- Title
- Microstructural and electrical investigation of Ni/Au ohmic contact on p-type GaN
- Authors
- Kim, JK; Je, JH; Lee, JW; Park, YJ; Kim, T; Jung, IO; Lee, BT; Lee, JL
- Date Issued
- 2001-02
- Publisher
- MINERALS METALS MATERIALS SOC
- Abstract
- Electrical properties of Ni/Au ohmic contacts on p-type GaN were interpreted with the change of microstructure observed under transmission electron microscopy. The contact resistivity was decreased from 1.3 x 10(-2) to 6.1 x 10(-4) Omega cm(2) after annealing at 600 degreesC. The reduction is due to the dissolution of Ga atoms into Au-Ni solid solution formed during annealing, via the generation of Ga vacancies, Thus, net concentration of holes increased below the contact, resulting in the reduction of contact resistivity. At 800 degreesC, N atoms decomposed; reacted with Ni, and forming cubic Ni4N. Consequently, N vacancies, acting as donors in GaN, were generated below the contact, leading to the increase of contact resistivity to 3.8 x 10(-2) Omega cm(2).
- Keywords
- p-type GaN; ohmic contact; microstructure; N-TYPE GAN; THERMAL-STABILITY; SCHOTTKY CONTACT
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/28166
- DOI
- 10.1007/s11664-001-0110-3
- ISSN
- 0361-5235
- Article Type
- Article
- Citation
- JOURNAL OF ELECTRONIC MATERIALS, vol. 30, no. 2, page. L8 - L12, 2001-02
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- There are no files associated with this item.
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