Effects of surface treatments on the electrical and the microstructural changes of Pd contact an p-type GaN
SCIE
SCOPUS
- Title
- Effects of surface treatments on the electrical and the microstructural changes of Pd contact an p-type GaN
- Authors
- Kim, JK; Kim, CC; Cho, TS; Je, JH; Kwak, JS; Park, YJ; Lee, JL
- Date Issued
- 2001-03
- Publisher
- MINERALS METALS MATERIALS SOC
- Abstract
- We investigated the effects of surface treatments by aqua regia and (NH4)(2)S-x on the electrical and the microstructural changes of Pd contact on p-type GaN during annealing. The formation of a surface oxide was suppressed by the (NH4)(2)S-x treatment, and S-Ga and S-N bonds with binding energy of 162.1 eV and 163.6 eV were formed, degrading the structural ordering of Pd. After 300 degreesC annealing, the contact resistivity in the aqua regia-treated sample increased significantly. This could be attributed to the outdiffusion of N atoms leaving N vacancies below the contact, as confirmed by the increase of the Pd (111) plane spacing probably due to the dissolution of N atoms in Pd interstitial sites. Meanwhile, the contact resistivity in the (NH4)(2)S-x-treated sample was not degraded and no change was observed in the Pd (111) plane spacing. These results suggest that S-Ga and S-N bonds formed on (NH4)(2)S-x-treated GaN could act as a diffusion barrier for the outdiffusion of N atoms. The contact resistivity for the aqua regia-treated sample decreased again, probably due to the outdiffusion of Ga as well as N atoms at 500 degreesC.
- Keywords
- p-type GaN; Pd ohmic contact; (NH4)(2)S-x treatment; aqua regia treatment; x-ray scattering; microstructure; OHMIC CONTACTS; LASER-DIODES; FILMS; INP
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/28164
- DOI
- 10.1007/s11664-001-0011-5
- ISSN
- 0361-5235
- Article Type
- Article
- Citation
- JOURNAL OF ELECTRONIC MATERIALS, vol. 30, no. 3, page. 170 - 174, 2001-03
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- There are no files associated with this item.
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