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KIM, DONG EON(김동언) researcherid scopus

Department: Dept of Physics(물리학과)

Major(s): 플라스마물리 ; 광학, 원자분자 물리, 자성체 물리

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Author : Xu, CK

Article

Electrical properties and near band edge emission of Bi-doped ZnO nanowiresSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 90, no. 8, page. 83113 - 83113, 2007-02-19

Article

Ferromagnetic and electrical characteristics of in situ manganese-doped GaN nanowiresSCIESCOPUS

JOURNAL OF PHYSICAL CHEMISTRY C, vol. 111, no. 3, page. 1180 - 1185, 2007-01-25

Article

In situ fabrication and blueshifted red emission of GaN : Eu nanoneedlesSCIESCOPUS

NANOTECHNOLOGY, vol. 18, no. 1, page. 15703 - 15703, 2007-01-10

Article

Ferromagnetic GaN : MnAlSi nanowiresSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 99, no. 6, page. 64312 - 64312, 2006-03-15

Article

Fabrication and photoluminescence of ZnO hierarchical nanostructures containing Bi2O3SCIESCOPUS

NANOTECHNOLOGY, vol. 17, no. 1, page. 60 - 64, 2006-01-14

Article

Fabrication and photoluminescence of zinc silicate/silica modulated ZnO nanowiresSCIESCOPUS

NANOTECHNOLOGY, vol. 16, no. 12, page. 2808 - 2812, 2005-12

Article

Low-temperature (similar to 250 degrees C) route to lateral growth of ZnO nanowiresSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 87, no. 25, page. 253104 - 253104, 2005-12

Article

The selectively manipulated growth of crystalline ZnO nanostructuresSCIESCOPUS

NANOTECHNOLOGY, vol. 16, no. 10, page. 2104 - 2110, 2005-10

Article

Gallium-doped silicon nitride nanowires sheathed with amorphous silicon oxynitrideSCIESCOPUS

SCRIPTA MATERIALIA, vol. 53, no. 8, page. 949 - 954, 2005-10

Article

The formation of SiGaN/SiOxNy nanocables and SiOxNy-based nanostructures using GaN as a resource of GaSCIESCOPUS

CHEMICAL PHYSICS LETTERS, vol. 398, no. 1-3, page. 264 - 269, 2004-11-01

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