Gallium-doped silicon nitride nanowires sheathed with amorphous silicon oxynitride

Abstract

Gallium-doped silicon nitride nanowires sheathed with amorphous silicon oxynitride have been prepared on silicon substrates using GaN as the source of Ga. Ga plays important roles not only in the formation of silicon nitride nanowires but also their oxidation, forming the sheath of silicon oxynitride. The as-grown nanowires are of significance in facilitating complementary metal-oxide semiconductor-based nanodevice manufacturing. The photoluminescence spectra of the nanowires at 10K and 300 K are also investigated. (c) 2005 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.