The formation of SiGaN/SiOxNy nanocables and SiOxNy-based nanostructures using GaN as a resource of Ga
SCIE
SCOPUS
- Title
- The formation of SiGaN/SiOxNy nanocables and SiOxNy-based nanostructures using GaN as a resource of Ga
- Authors
- Xu, CK; Kim, M; Chung, SY; Chun, J; Kim, DE
- Date Issued
- 2004-11-01
- Publisher
- ELSEVIER SCIENCE BV
- Abstract
- SiGaN/SiOxNy nanocables and SiOxNy-based nanostructures on silicon and silica substrates, respectively, have been firstly synthesized via using GaN as a resource of Ga. The silica wafer is mainly responsible for the formation of SiOxNy-based nanostructures and the intermediate Ga plays an important role in the formation of diverse nanostructures. SEM, TEM, line scan and SAED were employed to characterize as-prepared samples. The growth mechanism of as-prepared samples is also discussed. (C) 2004 Elsevier B.V. All rights reserved.
- Keywords
- LIQUID-PHASE EPITAXY; SILICON; NANOWIRES; THIN; SIO2; N2O; PHOTOLUMINESCENCE; OXYNITRIDES; GROWTH
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/17643
- DOI
- 10.1016/j.cplett.2004.09.066
- ISSN
- 0009-2614
- Article Type
- Article
- Citation
- CHEMICAL PHYSICS LETTERS, vol. 398, no. 1-3, page. 264 - 269, 2004-11-01
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- There are no files associated with this item.
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