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In situ fabrication and blueshifted red emission of GaN : Eu nanoneedles SCIE SCOPUS

Title
In situ fabrication and blueshifted red emission of GaN : Eu nanoneedles
Authors
Xu, CKChun, JChon, BJoo, TKim, DE
Date Issued
2007-01-10
Publisher
IOP PUBLISHING LTD
Abstract
A vapour transport route for the in situ fabrication of Eu-doped GaN nanoneedles is reported. The nanoneedles are single crystals of hexagonal structure and they grow in the [100] direction. The typical taper of a nanoneedle (in diameter) varies from 5 nm to 1 mu m with a length of up to a few microns. Energy-dispersive x-ray studies indicate that the Eu concentration doped into the GaN nanoneedles is similar to 0.2 at.%. Photoluminescence spectra show that the nanoneedles have very strong red emission around 611 nm with a significant blueshift by 11 nm probably due to the nanostructures' small size and the surface states of the nanoneedles. The flow rate of ammonia is shown to have a large effect on the doping rate and photoluminescence of GaN: Eu nanoneedles.
Keywords
MOLECULAR-BEAM EPITAXY; EARTH-DOPED GAN; OPTICAL-PROPERTIES; LUMINESCENCE PROPERTIES; IMPLANTED GAN; PHOTOLUMINESCENCE; NANOWIRES; GROWTH; ELECTROLUMINESCENCE; CATHODOLUMINESCENCE
URI
https://oasis.postech.ac.kr/handle/2014.oak/23585
DOI
10.1088/0957-4484/18/1/015703
ISSN
0957-4484
Article Type
Article
Citation
NANOTECHNOLOGY, vol. 18, no. 1, page. 15703 - 15703, 2007-01-10
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주태하JOO, TAIHA
Dept of Chemistry
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