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Showing results 1 to 8 of 8
Article
Characterization of zirconium silicate gate dielectrics deposited on si(100) using Zr(NEt2)(4) and Si((OBu)-Bu-n)(4)SCIESCOPUS

ELECTROCHEMICAL AND SOLID STATE LETTERS, vol. 7, no. 5, page. F35 - F37, 2004-03

Article
Electrical characterization of Ti-silicate films grown by atomic layer chemical vapor depositionSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, vol. 46, no. 8A, page. 5259 - 5263, 2007-08

Article
Growth and characterization of Hf-silicate/Al2O3 gate stacks grown on Si(100) by self-limiting atomic layer depositionSCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, vol. 45, no. 9A, page. 7080 - 7083, 2006-09

Article
Growth and characterization of titanium silicate nanofilms for gate oxide applicationsSCIESCOPUS

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, vol. 8, no. 2, page. 577 - 583, 2008-02

Article
Growth of zirconium silicate thin film by pulsed-MOCVD using ZTB and TDEASSCIESCOPUS

SURFACE REVIEW AND LETTERS, vol. 13, no. 5, page. 567 - 571, 2006-10

Article
Interfacial properties of ultra thin ZrxSi1-xO2 with compositional gradation grown on Si(100) using Zr[N(C2H5)(2)](4) and Si(OC4H9)(4)SCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 22, no. 4, page. 2105 - 2109, 2004-07

Article
Photoelectron spectroscopic analysis of Hf-silicate/SiO2/Si stacks deposited by atomic layer chemical vapor depositionSCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 24, no. 3, page. 1147 - 1150, 2006-05

Article
Physical and electrical characterizations of ultrathin Si-rich Hf-silicate film and Hf-silicate/SiO2 bilayer deposited by atomic layer chemical vapor depositionSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 100, no. 4, page. 44106-1 - 44106-5, 2006-08-15

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