Growth of zirconium silicate thin film by pulsed-MOCVD using ZTB and TDEAS
SCIE
SCOPUS
- Title
- Growth of zirconium silicate thin film by pulsed-MOCVD using ZTB and TDEAS
- Authors
- Kim, J; Yong, KJ
- Date Issued
- 2006-10
- Publisher
- WORLD SCIENTIFIC PUBL CO PTE LTD
- Abstract
- Zirconium silicate (ZrxSi1-xO2) thin films were deposited by pulsed metal-organic chemical vapor deposition (MOCVD) using zirconium tert-butoxide (ZTB) and tetrakis-diethylamido silane (TDEAS). The growth temperature of 200-300 degrees C was used to deposit films with uniform thickness. The grown films showed the Zr-rich composition, which is thought to induce the Zr-silicide formation at the interface of the silicate and Si substrate. The film composition and chemical binding states were investigated by XPS depth profiling measurements.
- Keywords
- zirconium silicate; MOCVD; metal oxide; ATOMIC LAYER DEPOSITION; GATE DIELECTRICS; HAFNIUM
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/23493
- DOI
- 10.1142/S0218625X06008505
- ISSN
- 0218-625X
- Article Type
- Article
- Citation
- SURFACE REVIEW AND LETTERS, vol. 13, no. 5, page. 567 - 571, 2006-10
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- There are no files associated with this item.
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