Electrical characterization of Ti-silicate films grown by atomic layer chemical vapor deposition
SCIE
SCOPUS
- Title
- Electrical characterization of Ti-silicate films grown by atomic layer chemical vapor deposition
- Authors
- Lee, S; Yong, K
- Date Issued
- 2007-08
- Publisher
- INST PURE APPLIED PHYSICS
- Abstract
- Electrical characterization was performed for Ti-silicate films, which were deposited by atomic layer chemical vapor deposition (ALCVD). Before the deposition of Ti-silicate films, the silicon substrates were pretreated differently using hydrofluoric acid (HF)-etching, chemical oxidation, and thermal oxidation. Regardless of the pretreatment methods, the grown films showed a highly smooth surface with rms below 0.52 nm. The electrical properties of the grown Ti-silicate films showed a strong dependence on the substrate pretreatments. The 5-nm-thick Ti-silicate films grown on hydrogen-passivated Si and chemically oxidized Si showed rather high leakage currents, whereas the films grown on thermally oxidized Si showed low leakage currents below I X 10(-7) A/cm(2) at a bias of -I V. All of the films showed a positive shift in the flatband voltage (V-FB) upon annealing. Also, each film showed low a hysteresis below 180mV and the hysteresis decreased upon annealing.
- Keywords
- titanium silicate; atomic layer chemical vapor deposition; thin film; dielectric materials; high-k; PULSED-LASER DEPOSITION; THIN-FILMS; GATE DIELECTRICS; PHYSICAL-PROPERTIES; ROOM-TEMPERATURE; HAFNIUM; OXIDE; SI(100)
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/23220
- DOI
- 10.1143/JJAP.46.5259
- ISSN
- 0021-4922
- Article Type
- Article
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, vol. 46, no. 8A, page. 5259 - 5263, 2007-08
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