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Showing results 137 to 148 of 148

Article

TCAD-Based Flexible Fin Pitch Design for 3-nm Node 6T-SRAM Using Practical Source/Drain Patterning SchemeSCIESCOPUS

IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 68, no. 3, page. 1031 - 1036, 2021-03

Conference

Temperature dependent performances of nMOSFET with HfLaSiO gate dielectric

IEEE Nanotechnology Materials and Devices Conference (NMDC2008), 2008-10-20

Conference

The Effects of Realistic U-shaped Source/Drain on DC/AC Performances of Silicon Nanosheet FETs for Sub 5-nm Node SoC Applications

2019 IEEE Electron Devices Technology and Manufacturing Conference (EDTM), page. 133 - 135, 2019-03-14

Conference

The Origin of Incremental Step Pulse Programming (ISPP) Slope Degradation in NAND Flash Memory

제 27회 반도체학술대회, 2020-02-13

Conference

The Performance of HfSiON/TiN Gate Stack MOSFETs for 45 nm Node LSTP Application Using Conventional Fabrication Process

IEEE Nanotechnology Materials and Devices Conference (NMDC2008), 2008-10-20

Article

Threshold voltage variation depending on single grain boundary and stored charges in an adjacent cell for vertical silicon-oxide-nitride-oxide-silicon (SONOS) NAND flash memorySCIESCOPUS

JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 57, no. 4S, 2018-04

Article

Threshold Voltage Variations Induced by Si1-xGex and Si1-xCx of Sub 5-nm Node Silicon Nanosheet Field-Effect TransistorsSCIE

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, vol. 20, no. 8, page. 4684 - 4689, 2020-08

Conference

TSV-to-Transistor Noise Coupling Characterizations for Sub 5-nm Node Fin- and Nanosheet FETs in 3D-IC

The 18th International Nanotech Symposium & Exhibition, 2020-07-01

Conference

VLSI Processed InGaAs on Si MOSFETs with Thermally Stable, Self-Aligned Ni-InGaAs Contacts Achieving: Enhanced Drive Current and Pathway Towards a Unified S/D Contact Module

IEEE International Electron Devices Meeting, 2013-12-09

Conference

Vth Variation Induced by S/D Mole Fraction and Si/SiGe Intermixing of Si-NSFETs

제26회 한국반도체학술대회 (KCS 2019), 2019-02-14

Conference

Vth variation of string SONOS NAND Flash depending on single grain boundary and stored electron charges in an adjacent cell

International Conference on Solid State Devices and Materials (SSDM 2017), page. 793 - 794, 2017-09-21

Article

Work function consideration in vacuum field emission transistor designSCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 35, no. 6, 2017-11

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