Work function consideration in vacuum field emission transistor design
SCIE
SCOPUS
- Title
- Work function consideration in vacuum field emission transistor design
- Authors
- Kim, Jiwon; Oh, Hyeongwan; Kim, Jungsik; Baek, Rock-Hyun; Han, Jin-Woo; Meyyappan, M.; Lee, Jeong-Soo
- Date Issued
- 2017-11
- Publisher
- A V S AMER INST PHYSICS
- Abstract
- Effects of work function engineering on the electrical characteristics of nanoscale gate-all-around (GAA) vacuum field emission transistors (VFETs) is investigated using three dimensional technology computer aided design simulation. A low gate work function can be useful to reduce the threshold voltage suitable for lower power operation. As expected, the lower emitter work function GAA VFETs provide a reduced threshold voltage and an enhanced on-current due to the reduction of electron tunneling barrier height between the emitter and the vacuum channel. Even though a constant threshold voltage behavior has been observed with various collector materials, a higher collector work function can increase the tunneling barrier height nearby the collector side and mitigate carrier generation from the collector to vacuum, resulting in higher on-current with lower gate-leakage current. Published by the AVS.
- Keywords
- CHANNEL TRANSISTOR
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/50802
- DOI
- 10.1116/1.5000549
- ISSN
- 1071-1023
- Article Type
- Article
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 35, no. 6, 2017-11
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