Open Access System for Information Sharing

Browse by Researchers

LEE, JANG SIK(이장식) scopus

Department: Dept of Materials Science & Engineering(신소재공학과)

Major(s): -

E-Mail

Homepage

Co-researchers

Keyword

Publication & Time Cited Count (For the Last 5 years)

Results 1-11 of 11 (Search time: 0.001 seconds).

Applied search limites :

Date Issued : 2016

Article

Design of Electrodeposited Bilayer Structures for Reliable Resistive Switching with Self-ComplianceSCIESCOPUS

ACS Applied Materials & Interfaces, vol. 8, no. 48, page. 32918 - 32924, 2016-12-07

Article

Integration scheme of nanoscale resistive switching memory using bottom-up processes at room temperature for high-density memory applicationsSCIESCOPUS

Scientific Reports, vol. 6, 2016-07-01

Article

Bottom-up synthesis of ordered metal/oxide/metal nanodots on substrates for nanoscale resistive switching memorySCIESCOPUS

Scientific Reports, vol. 6, page. 25537, 2016-05-09

Article

Flexible Hybrid Organic–Inorganic Perovskite MemorySCIESCOPUS

ACS NANO, vol. 10, no. 5, page. 5413 - 5418, 2016-05

Article

Patterning of amorphous-InGaZnO thin-film transistors by stamping of surface-modified polydimethylsiloxaneSCIESCOPUS

RSC Advances, vol. 6, no. 49, page. 43147 - 43151, 2016-04

Article

Flexible resistive switching memory with a Ni/CuOx/Ni structure using an. electrochemical deposition processSCIESCOPUS

NANOTECHNOLOGY, vol. 27, no. 12, page. 125203, 2016-03-29

Article

Controlling the Resistive Switching Behavior in Starch-Based Flexible BiomemristorsSCIESCOPUS

ACS Applied Materials & Interfaces, vol. 8, no. 11, page. 7326 - 7332, 2016-03-23

Article

Controlled synthesis of Ni/CuOx/Ni nanowires by electrochemical deposition with self-compliance bipolar resistive switchingSCIESCOPUS

Scientific Reports, vol. 6, 2016-03-15

Article

Reliable resistive switching memory based on oxygen-vacancy-controlled bilayer structuresSCIESCOPUS

RSC Advances, vol. 6, no. 26, page. 21736 - 21741, 2016-02

Article

Control of resistive switching behaviors of solution-processed HfOX-based resistive switching memory devices by n-type dopingSCIESCOPUS

RSC Advances, vol. 6, no. 26, page. 21917 - 21921, 2016-02

Article

Self-assembled nanostructured resistive switching memory devices fabricated by templated bottom-up growthSCIESCOPUS

Scientific Reports, vol. 6, 2016-01-07

Open Access System for Information Sharing

Co-researchers

Keyword

Publication & Time Cited Count (For the Last 5 years)

Date issued

Type

Subject

Journal Registered

Browse