Controlling the Resistive Switching Behavior in Starch-Based Flexible Biomemristors

Abstract

Implementation of biocompatible materials in resistive switching memory (ReRAM) devices provides opportunities to use them in biomedical applications. We demonstrate a robust, nonvolatile, flexible, and transparent ReRAM based on potato starch. We also introduce a biomolecular memory device that has a starch chitosan composite layer. The ReRAM behavior can be controlled by mixing starch with chitosan in the resistive switching layer. Whereas starch-based biomemory devices which show abrupt changes in current level; the memory device with mixed biopolymers undergoes gradual changes. Both devices exhibit uniform and robust programmable memory properties for nonvolatile memory applications. The explicated source of the bipolar resistive switching behavior is assigned to formation and rupture of carbon-rich filaments. The gradual set/reset behavior in the memory device based on a starch chitosan mixture makes it suitable for use in neuromorphic devices.