Controlled synthesis of Ni/CuOx/Ni nanowires by electrochemical deposition with self-compliance bipolar resistive switching
SCIE
SCOPUS
- Title
- Controlled synthesis of Ni/CuOx/Ni nanowires by electrochemical deposition with self-compliance bipolar resistive switching
- Authors
- Park, K; Lee, JS
- Date Issued
- 2016-03-15
- Publisher
- NATURE PUBLISHING GROUP
- Abstract
- We demonstrate synthesis of Ni/CuOx/Ni nanowires (NWs) by electrochemical deposition on anodized aluminum oxide (AAO) membranes. AAO with pore diameter of similar to 70 nm and pore length of similar to 50 mu m was used as the template for synthesis of NWs. After deposition of Au as the seed layer, NWs with a structure of Ni/CuOx/Ni were grown with a length of similar to 12 mu m. The lengths of 1st Ni, CuOx, and 2nd Ni were similar to 4.5 mu m, similar to 3 mu m, and similar to 4.5 mu m, respectively. The Ni/CuOx/Ni device exhibits bipolar resistive switching behavior with self-compliance characteristics. Due to the spatial restriction of the current path in NW the Ni/CuOx/Ni NW devices are thought to exhibit self-compliance behaviour. Ni/CuOx/Ni NWs showed bipolar resistive changes possibly due to conducting filaments that are induced by oxygen vacancies. The reliability of the devices was confirmed by data retention measurement. The NW-based resistive switching memory has applications in highly scalable memory devices and neuromorphic devices.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/29972
- DOI
- 10.1038/SREP23069
- ISSN
- 2045-2322
- Article Type
- Article
- Citation
- Scientific Reports, vol. 6, 2016-03-15
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