Open Access System for Information Sharing

Login Library
검색

  Browse by Researchers
()
Department
Major(s)
-

Co-researchers

    Keyword

    Publication & Time Cited Count (For the Last 5 years)

    Results 1-9 of 9 (Search time: 0.002 seconds).
    Export

    Date issued

    Type

    Journal Registered

    Applied search limites :
    Subject : gallium compounds
    Article
    Growth and characteristics of GaInN/GaInN multiple quantum well light-emitting diodesSCIESCOPUS

    JOURNAL OF APPLIED PHYSICS, vol. 107, no. 6, page. 63102, 2010-03-15

    Article
    Improved performance of GaN-based blue light emitting diodes with InGaN/GaN multilayer barriersSCIESCOPUS

    APPLIED PHYSICS LETTERS, vol. 95, no. 24, page. 241109 - 241109, 2009-12-14

    Article
    High output power density from GaN-based two-dimensional nanorod light-emitting diode arraysSCIESCOPUS

    APPLIED PHYSICS LETTERS, vol. 94, no. 14, 2009-04-06

    Article
    Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densitiesSCIESCOPUS

    APPLIED PHYSICS LETTERS, vol. 94, no. 11, 2009-03-16

    Article
    The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodesSCIESCOPUS

    APPLIED PHYSICS LETTERS, vol. 94, no. 8, 2009-02-23

    Article
    On resonant optical excitation and carrier escape in GaInN/GaN quantum wellsSCIESCOPUS

    APPLIED PHYSICS LETTERS, vol. 94, no. 8, 2009-02-23

    Article
    REDUCTION IN EFFICIENCY DROOP, FORWARD VOLTAGE, IDEALITY FACTOR, AND WAVELENGTH SHIFT IN POLARIZATION-MATCHED GAINN/GAINN MULTI-QUANTUM-WELL LIGHT-EMITTING DIODESSCIESCOPUS

    APPLIED PHYSICS LETTERS, vol. 94, no. 1, page. 11113 - 11113, 2009-01-05

    Article
    Elimination of total internal reflection in GaInN light-emitting diodes by graded-refractive-index micropillarsSCIESCOPUS

    APPLIED PHYSICS LETTERS, vol. 93, no. 22, 2008-12-01

    Article
    Effect of dislocations on electrical and optical properties of n-type Al0.34Ga0.66NSCIESCOPUS

    APPLIED PHYSICS LETTERS, vol. 93, no. 19, 2008-11-10

    1
    개인정보처리방침 Personal Information Protection Policy

    library@postech.ac.kr Tel: 054-279-2548

    Copyrights © by 2017 Pohang University of Science ad Technology All right reserved.

    Browse

    Login Library Help