Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities
SCIE
SCOPUS
- Title
- Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities
- Authors
- Dai, Q; Schubert, MF; Kim, MH; Kim, JK; Schubert, EF; Koleske, DD; Crawford, MH; Lee, SR; Fischer, AJ; Thaler, G; Banas, MA
- Date Issued
- 2009-03-16
- Publisher
- AMER INST PHYSICS
- Abstract
- Room-temperature photoluminescence (PL) measurements are performed on GaInN/GaN multiple-quantum-well heterostructures grown on GaN-on-sapphire templates with different threading-dislocation densities. The selective optical excitation of quantum wells and the dependence of integrated PL intensity on excitation power allow us to determine the internal quantum efficiency (IQE) as a function of carrier concentration. The measured IQE of the sample with the lowest dislocation density (5.3x10(8) cm(-2)) is as high as 64%. The measured nonradiative coefficient A varies from 6x10(7) to 2x10(8) s(-1) as the dislocation density increases from 5.3x10(8) to 5.7x10(9) cm(-2), respectively.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9674
- DOI
- 10.1063/1.3100773
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 94, no. 11, 2009-03-16
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