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The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes SCIE SCOPUS
- Title
- The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes
- Authors
- Zhu, D; Xu, JR; Noemaun, AN; Kim, JK; Schubert, EF; Crawford, MH; Koleske, DD
- Date Issued
- 2009-02-23
- Publisher
- AMER INST PHYSICS
- Abstract
- We report on a significant decrease in the diode-ideality factor of GaInN/GaN multiple quantum well light-emitting diodes (LEDs), from 5.5 to 2.4, as Si-doping is applied to an increasing number of quantum barriers (QBs). The minimum ideality factor of 2.4 is obtained when all QBs are doped. It is shown that polarization-induced triangular band profiles of the undoped QBs are the major cause of the high ideality factors in GaInN/GaN LEDs. Numerical simulations show excellent agreement with the measured ideality factor value and its dependence on QB doping.
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 94, no. 8, 2009-02-23
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