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KIM, JONG KYU(김종규) researcherid scopus

Department: Dept of Materials Science & Engineering(신소재공학과)

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Publication & Time Cited Count (For the Last 5 years)

Results 1-5 of 5 (Search time: 0.002 seconds).

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Subject : FIELD-EFFECT TRANSISTORS

Article

Carrier transport mechanism of AlGaN/GaN Schottky barrier diodes with various Al mole fractionsSCIESCOPUS

Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 9, no. 3-4, page. 851 - 854, 2012-03

Article

Metal/GaN reaction chemistry and their electrical propertiesSCIESCOPUS

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, vol. 241, no. 12, page. 2771 - 2774, 2004-10

Article

Mechanism of two-dimensional electron gas formation in AlxGa1-xN/GaN heterostructuresSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 81, no. 7, page. 1249 - 1251, 2002-08-12

Article

Au catalyzed structural and electrical evolution of Ni/Au contact to GaNSCIESCOPUS

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, vol. 188, no. 1, page. 379 - 382, 2001-11

Article

High-temperature structural behavior of Ni/Au contact on GaN (0001)SCIESCOPUS

MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, vol. 6, no. 4, page. 1 - 7, 2001-01

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