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HWANG, HYUNSANG(황현상) scopus
Department
Dept of Materials Science & Engineering(신소재공학과)
Major(s)
-

Co-researchers

    Keyword

    Publication & Time Cited Count (For the Last 5 years)

    Results 21-40 of 46 (Search time: 0.002 seconds).
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    Conference
    Resistance Controllability and Variability Improvement in a TaOx- based Resistive Memory for Multilevel Storage Application

    제23회 한국반도체학술대회, 2016-02-24

    Conference
    Origin of Leakage Current of NbOx Film and Improved Threshold Switching Characteristics of Multi-layer NbOx Selector

    제23회 한국반도체학술대회, 2016-02-23

    Conference
    Reliability of Hour-Glass Shaped Filament in a Cu-based Al2O3/WO3 Conductive Bridge RAM System

    제23회 한국반도체학술대회, 2016-02-23

    Conference
    Suppression of the Reset Breakdown Failure by using RuO2 Electrode in HfOx-based RRAM

    제23회 한국반도체학술대회, 2016-02-23

    Conference
    Effects of Gate Bias on Reset Failure in HfO2 based 1T1R ReRAM Cell

    제23회 한국반도체학술대회, 2016-02-23

    Conference
    Effects of N-GST Buffer Layer on Switching Characteristics of CBRAM

    제23회 한국반도체학술대회, 2016-02-23

    Conference
    Towards High Performance Selector Device for 3D Stacked Cross-Point Arrays

    제 21회 한국반도체학술대회, 2015-02-25

    Conference
    Hardware Implementation of Associative Memory Characteristics

    제 21회 한국반도체학술대회, 2015-02-25

    Conference
    Selector-less ReRAM with an Excellent Selectivity by the Tunnel Barrier Engineered Multi-layer Titanium Oxide and Triangular Shaped AC Pulse

    제22회 한국반도체학술대회, 2015-02-12

    Conference
    Multi-state resistance controllability and variability analysis of binary oxide RRAM for ultra-high density memory applications

    제22회 한국반도체학술대회, 2015-02-12

    Conference
    Sub-Oxide Dependence of Insulator Metal Transition Characteristics on 3-D Structural Niobium Oxide Selector

    제22회 한국반도체학술대회, 2015-02-12

    Conference
    Improvement in reliability characteristics (retention and endurance) of RRAM by using high-pressure hydrogen annealing

    제22회 한국반도체학술대회, 2015-02-12

    Conference
    TiOx-based Filamentary ReRAM Synapse for Neuromorphic Systems

    제22회 한국반도체학술대회, 2015-02-12

    Conference
    Direct Observation of Interfacial Switching Processes of PrxCa1-xMnO3–based ReRAM Devices using in situ TEM

    2014 Fall Korean Society of Microscopy Conference, 2014-11-13

    Conference
    Building Artificial Brains using Redox-based Memristive Synapses

    2014 INVITATION WORKSHOP FOR MEMRISTOR, 2014-04-18

    Conference
    Excellent Non-Linear I-V Characteristics of Ti/HfOx ReRAM with Ultrathin TiOy Tunnel Barrier for Cross Point Memory Application

    제 21회 한국반도체학술대회, 2014-02-26

    Conference
    Metal-Insulator-Transition in Nano Scale SmNiO3 for Selector Application with BEOL Compatibility

    제 21회 한국반도체학술대회, 2014-02-26

    Conference
    An Investigation of Electrical Characteristics in TiOx Thin Film by Controlling Oxygen Vacancy

    제 21회 한국반도체학술대회, 2014-02-26

    Conference
    Improved synaptic characteristics of filamentary ReRAM by adopting interfacial oxide for neuromorphic device application

    제 21회 한국반도체학술대회, 2014-02-25

    Conference
    Improvement in the ON/OFF Ratio (~107) and Switching Uniformity of an Atom Switch Using TiOx Layer for Reconfigurable Logic Application

    제 21회 한국반도체학술대회, 2014-02-25

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