Excellent Non-Linear I-V Characteristics of Ti/HfOx ReRAM with Ultrathin TiOy Tunnel Barrier for Cross Point Memory Application
- Title
- Excellent Non-Linear I-V Characteristics of Ti/HfOx ReRAM with Ultrathin TiOy Tunnel Barrier for Cross Point Memory Application
- Authors
- 황현상
- Date Issued
- 2014-02-26
- Publisher
- 한국반도체연구조합
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/69121
- Article Type
- Conference
- Citation
- 제 21회 한국반도체학술대회, 2014-02-26
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- There are no files associated with this item.
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