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HWANG, HYUNSANG(황현상) scopus
Department
Dept of Materials Science & Engineering(신소재공학과)
Major(s)
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    Keyword

    Publication & Time Cited Count (For the Last 5 years)

    Results 21-34 of 34 (Search time: 0.001 seconds).
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    Date Issued : [2012 TO 2019]
    Conference
    TiOx-based Filamentary ReRAM Synapse for Neuromorphic Systems

    제22회 한국반도체학술대회, 2015-02-12

    Conference
    Direct Observation of Interfacial Switching Processes of PrxCa1-xMnO3–based ReRAM Devices using in situ TEM

    2014 Fall Korean Society of Microscopy Conference, 2014-11-13

    Conference
    Building Artificial Brains using Redox-based Memristive Synapses

    2014 INVITATION WORKSHOP FOR MEMRISTOR, 2014-04-18

    Conference
    Excellent Non-Linear I-V Characteristics of Ti/HfOx ReRAM with Ultrathin TiOy Tunnel Barrier for Cross Point Memory Application

    제 21회 한국반도체학술대회, 2014-02-26

    Conference
    Metal-Insulator-Transition in Nano Scale SmNiO3 for Selector Application with BEOL Compatibility

    제 21회 한국반도체학술대회, 2014-02-26

    Conference
    An Investigation of Electrical Characteristics in TiOx Thin Film by Controlling Oxygen Vacancy

    제 21회 한국반도체학술대회, 2014-02-26

    Conference
    Improved synaptic characteristics of filamentary ReRAM by adopting interfacial oxide for neuromorphic device application

    제 21회 한국반도체학술대회, 2014-02-25

    Conference
    Improvement in the ON/OFF Ratio (~107) and Switching Uniformity of an Atom Switch Using TiOx Layer for Reconfigurable Logic Application

    제 21회 한국반도체학술대회, 2014-02-25

    Conference
    A Two-Step Set Operation for Reliability of ReRAM with Triple-Layer ReRAM

    제 21회 한국반도체학술대회, 2014-02-25

    Conference
    Improved Reliability of RRAM by Optimizing Pulse Shape to Minimize Current Overshoot

    제 21회 한국반도체학술대회, 2014-02-25

    Conference
    A new read scheme using-built in selectivity for high-density cross-point array resistive switching memory application

    제 19회 한국반도체학술대회, 2012-02-17

    Conference
    Improved Switching Uniformity in Ge2Sb2Te5 Based Resistive Switching Memory Device by Using Internal Resistor

    제 19회 한국반도체학술대회, 2012-02-17

    Conference
    Increasing Interfacial Fixed Charge at Al2O3/Si Using High Pressure Oxygen Annealing for Solar Cell Application

    제 19회 한국반도체학술대회, 2012-02-17

    Conference
    Ferroelectricity Induced Resistance Switching in PZT/PCMO/Nb:STO Epitaxial Heterostructure

    제 19회 한국반도체학술대회, 2012-02-17

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