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Improved Switching Uniformity in Ge2Sb2Te5 Based Resistive Switching Memory Device by Using Internal Resistor

Title
Improved Switching Uniformity in Ge2Sb2Te5 Based Resistive Switching Memory Device by Using Internal Resistor
Authors
황현상
Date Issued
2012-02-17
Publisher
한국반도체연구조합
URI
https://oasis.postech.ac.kr/handle/2014.oak/63349
Article Type
Conference
Citation
제 19회 한국반도체학술대회, 2012-02-17
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황현상HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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