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LEE, JONG LAM(이종람) researcherid scopus

Department: Dept of Materials Science & Engineering(신소재공학과)

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Publication & Time Cited Count (For the Last 5 years)

Results 1-6 of 6 (Search time: 0.001 seconds).

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Author : 576 Subject : GALLIUM NITRIDE

Article

X-ray photoemission determination of the Schottky barrier height of metal contacts to n-GaN and p-GaNSCIESCOPUS

JOURNAL OF APPLIED PHYSICS, vol. 92, no. 11, page. 6671 - 6678, 2002-12-01

Article

Room Temperature Ohmic contact on n-type GaN using plasma treatmentSCIESCOPUS

MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, vol. 6, no. 8, page. 1 - 7, 2001-01

Article

Ohmic contact formation mechanism of Pd nonalloyed contacts on p-type GaNSCIESCOPUS

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 147, no. 6, page. 2297 - 2302, 2000-06

Article

Pt ohmic contact to p-type GaN with contact resistivity of 10(-4) Omega center dot cm(2) using surface treatmentSCIESCOPUS

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 35, page. S1063 - S1066, 1999-12

Article

Effect of surface treatment by (NH4)(2)S-x solution on the reduction of ohmic contact resistivity of p-type GaNSCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 17, no. 2, page. 497 - 499, 1999-03

Article

Effect of surface treatment by KOH solution on ohmic contact formation of p-type GaNSCIESCOPUS

SOLID-STATE ELECTRONICS, vol. 43, no. 2, page. 435 - 438, 1999-02

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