Effect of surface treatment by KOH solution on ohmic contact formation of p-type GaN
SCIE
SCOPUS
- Title
- Effect of surface treatment by KOH solution on ohmic contact formation of p-type GaN
- Authors
- Lee, JL; Kim, JK; Lee, JW; Park, YJ; Kim, T
- Date Issued
- 1999-02
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Abstract
- The lowest contact resistivity was achieved by the surface treatment of p-type GaN using KOH solution prior to Pd/Au metal deposition. For the p-type GaN with a hole concentration of 2.9 x 10(16)/cm(3), the contact resistivity decreased from 2.9 x 10(-1) to 7.1 x 10(-3) Ohm cm(2) by the surface treatment. This is the lowest value among the previous results ever reported on the formation of ohmic contacts to p-type GaN. The surface treatment is effective in removing the surface oxides formed on p-type GaN during the epitaxial growth which play a role to inhibit the hole transport from metal to p-type GaN. (C) 1998 Elsevier Science Ltd. All rights reserved.
- Keywords
- GALLIUM NITRIDE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/28168
- DOI
- 10.1016/S0038-1101(98)00265-2
- ISSN
- 0038-1101
- Article Type
- Article
- Citation
- SOLID-STATE ELECTRONICS, vol. 43, no. 2, page. 435 - 438, 1999-02
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- There are no files associated with this item.
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