Pt ohmic contact to p-type GaN with contact resistivity of 10(-4) Omega center dot cm(2) using surface treatment
SCIE
SCOPUS
- Title
- Pt ohmic contact to p-type GaN with contact resistivity of 10(-4) Omega center dot cm(2) using surface treatment
- Authors
- Kim, JK; Lee, JL; Lee, J; Park, Y; Kim, T
- Date Issued
- 1999-12
- Publisher
- KOREAN PHYSICAL SOC
- Abstract
- Non-alloyed ohmic contacts to p-type GaN using surface treatment prior to Pt metal deposition was investigated. For the p-type GaN with a hole concentration of 1.9 x 10(17)/cm(3), the average contact resistivity drastically decreased from 4.7 x 10(-1) Omega.cm(2) to 3.7 x 10(-4) Omega.cm(2) by the surface treatment using aqua regia. X-ray photoelectron spectroscopy analysis shows that the surface treatment using aqua regia plays a role in removing the surface oxide formed on the surface of p-type GaN, and subsequently in reducing the barrier height for holes at the interface of Pt/p-type GaN, resulting in good ohmic contacts to p-type GaN.
- Keywords
- GALLIUM NITRIDE; PD/AU
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/38124
- ISSN
- 0374-4884
- Article Type
- Article
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 35, page. S1063 - S1066, 1999-12
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- There are no files associated with this item.
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