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KANG, BONG KOO(강봉구)

Department: Dept of Electrical Engineering(전자전기공학과)

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Publication & Time Cited Count (For the Last 5 years)

Results 1-6 of 6 (Search time: 0.001 seconds).

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Subject : MOSFETS

Article

Characterization of positive bias temperature instability concerning interfacial layer thickness of HfSiON/SiO2 nMOSFETSCIESCOPUS

MICROELECTRONICS RELIABILITY, vol. 100-101, 2019-09

Article

Method to extract parameters of power law for nano-scale SiON pMOSFETs under negative bias temperature instabilitySCIESCOPUS

MICROELECTRONICS RELIABILITY, vol. 88-90, page. 191 - 195, 2018-09

Article

Channel width dependence of AC stress on bulk nMOSFETsSCIESCOPUS

Microelectronics Reliability, vol. 64, page. 194 - 198, 2016-09

Article

Channel width dependence of mechanical stress effects induced by shallow trench isolation on device performance of nanoscale nMOSFETsSCIESCOPUS

Microelectronics Reliability, vol. 52, no. 9-10, page. 1949 - 1952, 2012-09

Article

Measurement of mechanical stresses induced by hybrid shallow-trench-isolation for dynamic random access memory using recess channel array transistor structureSCIESCOPUS

Microelectronic Engineering, vol. 91, page. 44 - 49, 2012-03

Article

Impact of Off-State Stress and Negative Bias Temperature Instability on Degradation of Nanoscale pMOSFETSCIESCOPUS

IEEE ELECTRON DEVICE LETTERS, vol. 33, no. 2, page. 137 - 139, 2012-02

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