Method to extract parameters of power law for nano-scale SiON pMOSFETs under negative bias temperature instability
SCIE
SCOPUS
- Title
- Method to extract parameters of power law for nano-scale SiON pMOSFETs under negative bias temperature instability
- Authors
- Yun, Yeohyeok; Kim, Gang-Jun; Seo, Ji-Hoon; Son, Donghee; Kang, Bongkoo
- Date Issued
- 2018-09
- Publisher
- Elsvier
- Abstract
- This paper proposes a fast and accurate method to extract parameters of the power law for nano-scale SiON pMOSFETs under negative bias temperature instability (NBTI), which is useful for an accurate estimation of NBTI lifetime. Experimental results show that accurate extraction of the time exponent n of the power law was obstructed by either fast trapping of minority carriers or damage recovery during measurement of threshold voltage V-th. These obstructing effects were eliminated using Delta V(th)s obtained from fast and slow measurement-stress-measurement (MSM) procedures. The experimental SiON pMOSFETs had n approximate to 1/4, an activation energy E-alpha = 0.04 eV for the fast recoverable degradation, and E-alpha = 0.2 eV for the slow permanent degradation. Based on these experimental observations, a method to estimate NBTI lifetime is proposed.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/98659
- DOI
- 10.1016/j.microrel.2018.07.056
- ISSN
- 0026-2714
- Article Type
- Article
- Citation
- MICROELECTRONICS RELIABILITY, vol. 88-90, page. 191 - 195, 2018-09
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