Characterization of positive bias temperature instability concerning interfacial layer thickness of HfSiON/SiO2 nMOSFET
SCIE
SCOPUS
- Title
- Characterization of positive bias temperature instability concerning interfacial layer thickness of HfSiON/SiO2 nMOSFET
- Authors
- ROH, GIYOUN; KANG, BONG KOO; KIM, HYEOK JIN
- Date Issued
- 2019-09
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Abstract
- This paper investigates how interfacial layer (IL) thickness of HfSiON/SiO2 nMOSFETs affects their responses to positive bias temperature instability. Experimental results show that stress-induced traps and secondary-hole trapping were generated more in a thicker IL nMOS than in a thinner IL nMOS. From these results, the thicker IL nMOS had larger threshold voltage-shift AVd, and lower time exponent n than the thinner IL nMOS at the same oxide field E. At high E, the thicker IL nMOS had shorter lifetime (t(L)) due to larger Delta V-th than the thinner IL nMOS. At low E-ox, related to operating voltage, the thicker IL nMOS had longer tL due to lower n than the thinner IL nMOS. Thus, thickening the IL is applicable to increase t(L) of HfSiON/SiO2 nMOSFET.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/101134
- DOI
- 10.1016/j.microrel.2019.113444
- ISSN
- 0026-2714
- Article Type
- Article
- Citation
- MICROELECTRONICS RELIABILITY, vol. 100-101, 2019-09
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- There are no files associated with this item.
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