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Thermally-activated device non-linearity in resistance-switching memory for cross-point array applications SCIE SCOPUS

Title
Thermally-activated device non-linearity in resistance-switching memory for cross-point array applications
Authors
Woo, JKim, SLee, WLee, DPark, SChoi, GCha, EHwang, H
Date Issued
2013-03-25
Publisher
American Institute of Physics Inc..
Abstract
We report a TiOx-based resistance-switching device that exhibits non-linearity in the low resistance state (LRS) under high operating current conditions for cross-point array applications. The transition of the conduction behavior in the LRS from linear to non-linear type was observed in the TiOx/TiOy bilayered structure by controlling programming currents. Our results suggest that the non-linear conduction behavior is activated in a thermally formed suboxide region due to lots of heat during the switching. By using achieved non-linearity of device, a one-resistor memory cell can be used for the suppression of sneak-path currents without the need for additional selector device. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4799148]
URI
https://oasis.postech.ac.kr/handle/2014.oak/9776
DOI
10.1063/1.4799148
ISSN
0003-6951
Article Type
Article
Citation
Applied Physics Letters, vol. 102, no. 12, page. 122115, 2013-03-25
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황현상HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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