Thermally-activated device non-linearity in resistance-switching memory for cross-point array applications
SCIE
SCOPUS
- Title
- Thermally-activated device non-linearity in resistance-switching memory for cross-point array applications
- Authors
- Woo, J; Kim, S; Lee, W; Lee, D; Park, S; Choi, G; Cha, E; Hwang, H
- Date Issued
- 2013-03-25
- Publisher
- American Institute of Physics Inc..
- Abstract
- We report a TiOx-based resistance-switching device that exhibits non-linearity in the low resistance state (LRS) under high operating current conditions for cross-point array applications. The transition of the conduction behavior in the LRS from linear to non-linear type was observed in the TiOx/TiOy bilayered structure by controlling programming currents. Our results suggest that the non-linear conduction behavior is activated in a thermally formed suboxide region due to lots of heat during the switching. By using achieved non-linearity of device, a one-resistor memory cell can be used for the suppression of sneak-path currents without the need for additional selector device. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4799148]
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9776
- DOI
- 10.1063/1.4799148
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- Applied Physics Letters, vol. 102, no. 12, page. 122115, 2013-03-25
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