DC Field | Value | Language |
---|---|---|
dc.contributor.author | Woo, J | - |
dc.contributor.author | Kim, S | - |
dc.contributor.author | Lee, W | - |
dc.contributor.author | Lee, D | - |
dc.contributor.author | Park, S | - |
dc.contributor.author | Choi, G | - |
dc.contributor.author | Cha, E | - |
dc.contributor.author | Hwang, H | - |
dc.date.accessioned | 2015-06-25T01:29:57Z | - |
dc.date.available | 2015-06-25T01:29:57Z | - |
dc.date.created | 2014-03-03 | - |
dc.date.issued | 2013-03-25 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000029024 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9776 | - |
dc.description.abstract | We report a TiOx-based resistance-switching device that exhibits non-linearity in the low resistance state (LRS) under high operating current conditions for cross-point array applications. The transition of the conduction behavior in the LRS from linear to non-linear type was observed in the TiOx/TiOy bilayered structure by controlling programming currents. Our results suggest that the non-linear conduction behavior is activated in a thermally formed suboxide region due to lots of heat during the switching. By using achieved non-linearity of device, a one-resistor memory cell can be used for the suppression of sneak-path currents without the need for additional selector device. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4799148] | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | American Institute of Physics Inc.. | - |
dc.relation.isPartOf | Applied Physics Letters | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Thermally-activated device non-linearity in resistance-switching memory for cross-point array applications | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.4799148 | - |
dc.author.google | Woo, J | en_US |
dc.author.google | Kim, S | en_US |
dc.author.google | Hwang, H | en_US |
dc.author.google | Cha, E | en_US |
dc.author.google | Choi, G | en_US |
dc.author.google | Park, S | en_US |
dc.author.google | Lee, D | en_US |
dc.author.google | Lee, W | en_US |
dc.relation.volume | 102 | en_US |
dc.relation.issue | 12 | en_US |
dc.relation.startpage | 122115 | en_US |
dc.contributor.id | 10079928 | en_US |
dc.relation.journal | Applied Physics Letters | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | Applied Physics Letters, v.102, no.12, pp.122115 | - |
dc.identifier.wosid | 000316967100047 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 122115 | - |
dc.citation.title | Applied Physics Letters | - |
dc.citation.volume | 102 | - |
dc.contributor.affiliatedAuthor | Hwang, H | - |
dc.identifier.scopusid | 2-s2.0-84875933362 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 10 | - |
dc.description.scptc | 10 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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