Multilayer-oxide-based bidirectional cell selector device for cross-point resistive memory applications
SCIE
SCOPUS
- Title
- Multilayer-oxide-based bidirectional cell selector device for cross-point resistive memory applications
- Authors
- Woo, J; Lee, D; Cha, E; Lee, S; Park, S; Hwang, H
- Date Issued
- 2013-11-11
- Publisher
- American Institute of Physics Inc..
- Abstract
- In this study, we propose a multilayer structure as an insulating oxide/conducting oxide/insulating oxide for a high-performance cell selector device. To achieve a desirable selector device for cross-point memory applications, the electrical characteristics of the selector device with a multilayer oxide have been systemically investigated by using various approaches such as interface engineering and by considering factors such as material dependence. Through the introduction of a multilayer oxide, a field-sensitive device structure that exhibits a highly nonlinear I-V curve is formed. Therefore, both high current density (J(MAX) > 10(7) A/cm(2)) and better off-current (I-OFF < 100 nA) can be achieved. (C) 2013 AIP Publishing LLC.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9775
- DOI
- 10.1063/1.4831680
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- Applied Physics Letters, vol. 103, no. 20, page. 202113, 2013-11-11
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