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Cited 13 time in webofscience Cited 11 time in scopus
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dc.contributor.authorWoo, Jko
dc.contributor.authorLee, Dko
dc.contributor.authorCha, Eko
dc.contributor.authorLee, Sko
dc.contributor.authorPark, Sko
dc.contributor.authorHwang, Hko
dc.date.available2015-06-25T01:29:53Z-
dc.date.created2014-03-03-
dc.date.issued2013-11-
dc.identifier.citationApplied Physics Letters, v.103, no.20, pp.202113-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000029033en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/9775-
dc.description.statementofresponsibilityopenen_US
dc.format.extentpdfen_US
dc.languageEnglish-
dc.publisherAmerican Institute of Physics Inc..-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titleMultilayer-oxide-based bidirectional cell selector device for cross-point resistive memory applications-
dc.typeArticle-
dc.contributor.college신소재공학과en_US
dc.identifier.doi10.1063/1.4831680-
dc.author.googleWoo, Jen_US
dc.author.googleLee, Den_US
dc.author.googleHwang, Hen_US
dc.author.googlePark, Sen_US
dc.author.googleLee, Sen_US
dc.author.googleCha, Een_US
dc.relation.volume103en_US
dc.relation.issue20en_US
dc.relation.startpage202113en_US
dc.contributor.id10079928en_US
dc.publisher.locationUSen_US
dc.relation.journalApplied Physics Lettersen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.contributor.localauthorHwang, H-
dc.contributor.nonIdAuthorWoo, J-
dc.contributor.nonIdAuthorLee, D-
dc.contributor.nonIdAuthorCha, E-
dc.contributor.nonIdAuthorLee, S-
dc.contributor.nonIdAuthorPark, S-
dc.identifier.wosid000327818700054-
dc.date.tcdate2019-01-01-
dc.citation.number20-
dc.citation.startPage202113-
dc.citation.titleApplied Physics Letters-
dc.citation.volume103-
dc.identifier.scopusid2-s2.0-84889670872-
dc.description.journalClass1-
dc.description.wostc7-
dc.description.scptc7*
dc.date.scptcdate2018-10-274*

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황현상HWANG, HYUNSANG
Dept of Materials Science & Enginrg
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