Improved switching uniformity in resistive random access memory containing metal-doped electrolyte due to thermally agglomerated metallic filaments
SCIE
SCOPUS
- Title
- Improved switching uniformity in resistive random access memory containing metal-doped electrolyte due to thermally agglomerated metallic filaments
- Authors
- Lee, W; Park, J; Kim, S; Woo, J; Shin, J; Lee, D; Cha, E; Hwang, H
- Date Issued
- 2012-04-02
- Publisher
- American Institute of Physics Inc..
- Abstract
- We demonstrate improved switching uniformity in resistive random-access memory (RRAM) containing metal-doped electrolyte due to thermally agglomerated metallic filaments. Rapid thermal annealing (RTA) produced copper-doped carbon (CuC) devices that exhibited better switching parameters, such as on/off resistance and set/reset voltage, than a control device. High-resolution transmission electron microscopy, electron dispersive spectroscopy, and conductive atomic force microscopy revealed that Cu atoms were agglomerated during the RTA process and formed a Cu filament in the CuC film. Consequently, the forming process can be eliminated, which is desirable for practical RRAM applications. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3700730]
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9748
- DOI
- 10.1063/1.3700730
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 100, no. 14, 2012-04-02
- Files in This Item:
-
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.