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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, W | - |
| dc.contributor.author | Park, J | - |
| dc.contributor.author | Kim, S | - |
| dc.contributor.author | Woo, J | - |
| dc.contributor.author | Shin, J | - |
| dc.contributor.author | Lee, D | - |
| dc.contributor.author | Cha, E | - |
| dc.contributor.author | Hwang, H | - |
| dc.date.accessioned | 2015-06-25T01:28:14Z | - |
| dc.date.available | 2015-06-25T01:28:14Z | - |
| dc.date.created | 2013-03-08 | - |
| dc.date.issued | 2012-04-02 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.other | 2015-OAK-0000027037 | en_US |
| dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9748 | - |
| dc.description.abstract | We demonstrate improved switching uniformity in resistive random-access memory (RRAM) containing metal-doped electrolyte due to thermally agglomerated metallic filaments. Rapid thermal annealing (RTA) produced copper-doped carbon (CuC) devices that exhibited better switching parameters, such as on/off resistance and set/reset voltage, than a control device. High-resolution transmission electron microscopy, electron dispersive spectroscopy, and conductive atomic force microscopy revealed that Cu atoms were agglomerated during the RTA process and formed a Cu filament in the CuC film. Consequently, the forming process can be eliminated, which is desirable for practical RRAM applications. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3700730] | - |
| dc.description.statementofresponsibility | open | en_US |
| dc.language | English | - |
| dc.publisher | American Institute of Physics Inc.. | - |
| dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
| dc.rights | BY_NC_ND | en_US |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
| dc.title | Improved switching uniformity in resistive random access memory containing metal-doped electrolyte due to thermally agglomerated metallic filaments | - |
| dc.type | Article | - |
| dc.contributor.college | 신소재공학과 | en_US |
| dc.identifier.doi | 10.1063/1.3700730 | - |
| dc.author.google | Lee, W | en_US |
| dc.author.google | Park, J | en_US |
| dc.author.google | Hwang, H | en_US |
| dc.author.google | Cha, E | en_US |
| dc.author.google | Lee, D | en_US |
| dc.author.google | Shin, J | en_US |
| dc.author.google | Woo, J | en_US |
| dc.author.google | Kim, S | en_US |
| dc.relation.volume | 100 | en_US |
| dc.relation.issue | 14 | en_US |
| dc.contributor.id | 10079928 | en_US |
| dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
| dc.relation.sci | SCI | en_US |
| dc.collections.name | Journal Papers | en_US |
| dc.type.rims | ART | - |
| dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.100, no.14 | - |
| dc.identifier.wosid | 000302567800032 | - |
| dc.date.tcdate | 2019-01-01 | - |
| dc.citation.number | 14 | - |
| dc.citation.title | APPLIED PHYSICS LETTERS | - |
| dc.citation.volume | 100 | - |
| dc.contributor.affiliatedAuthor | Hwang, H | - |
| dc.identifier.scopusid | 2-s2.0-84859802664 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalClass | 1 | - |
| dc.description.wostc | 18 | - |
| dc.description.scptc | 19 | * |
| dc.date.scptcdate | 2018-10-274 | * |
| dc.type.docType | Article | - |
| dc.subject.keywordPlus | COPPER | - |
| dc.subject.keywordPlus | DEPOSITION | - |
| dc.subject.keywordPlus | OXYGEN | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
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- 황현상HWANG, HYUNSANG
- Dept of Materials Science & Enginrg