Promotion of hole injection enabled by GaInN/GaN light-emitting triodes and its effect on the efficiency droop
SCIE
SCOPUS
- Title
- Promotion of hole injection enabled by GaInN/GaN light-emitting triodes and its effect on the efficiency droop
- Authors
- Hwang, S; Ha, WJ; Kim, JK; Xu, JR; Cho, JH; Schubert, EF
- Date Issued
- 2011-10-31
- Publisher
- AMER INST PHYSICS
- Abstract
- GaInN/GaN light-emitting triodes having two anodes for promoting the injection of holes into the active region were fabricated and characterized. It was found that the anode-to-anode bias modulates not only the hole-injection efficiency but also the effective light-emitting area and hence the current density through the active region. As the anode-to-anode bias increases, the efficiency at the same current density increases, whereas the efficiency droop decreases substantially, indicating that the limited hole-injection efficiency is one of the dominant mechanisms responsible for the efficiency droop in GaN-based light-emitting diodes. (C) 2011 American Institute of Physics. [doi:10.1063/1.3658388]
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9714
- DOI
- 10.1063/1.3658388
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 99, no. 18, page. 181115 - 181117, 2011-10-31
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