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Cited 19 time in webofscience Cited 18 time in scopus
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dc.contributor.authorHwang, S-
dc.contributor.authorHa, WJ-
dc.contributor.authorKim, JK-
dc.contributor.authorXu, JR-
dc.contributor.authorCho, JH-
dc.contributor.authorSchubert, EF-
dc.date.accessioned2015-06-25T01:26:10Z-
dc.date.available2015-06-25T01:26:10Z-
dc.date.created2012-03-29-
dc.date.issued2011-10-31-
dc.identifier.issn0003-6951-
dc.identifier.other2015-OAK-0000025330en_US
dc.identifier.urihttps://oasis.postech.ac.kr/handle/2014.oak/9714-
dc.description.abstractGaInN/GaN light-emitting triodes having two anodes for promoting the injection of holes into the active region were fabricated and characterized. It was found that the anode-to-anode bias modulates not only the hole-injection efficiency but also the effective light-emitting area and hence the current density through the active region. As the anode-to-anode bias increases, the efficiency at the same current density increases, whereas the efficiency droop decreases substantially, indicating that the limited hole-injection efficiency is one of the dominant mechanisms responsible for the efficiency droop in GaN-based light-emitting diodes. (C) 2011 American Institute of Physics. [doi:10.1063/1.3658388]-
dc.description.statementofresponsibilityopenen_US
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.rightsBY_NC_NDen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/kren_US
dc.titlePromotion of hole injection enabled by GaInN/GaN light-emitting triodes and its effect on the efficiency droop-
dc.typeArticle-
dc.contributor.college신소재공학과en_US
dc.identifier.doi10.1063/1.3658388-
dc.author.googleHwang, Sen_US
dc.author.googleHa, WJen_US
dc.author.googleSchubert, EFen_US
dc.author.googleCho, JHen_US
dc.author.googleXu, JRen_US
dc.author.googleKim, JKen_US
dc.relation.volume99en_US
dc.relation.issue18en_US
dc.relation.startpage181115en_US
dc.relation.lastpage181117en_US
dc.contributor.id10100864en_US
dc.relation.journalAPPLIED PHYSICS LETTERSen_US
dc.relation.indexSCI급, SCOPUS 등재논문en_US
dc.relation.sciSCIen_US
dc.collections.nameJournal Papersen_US
dc.type.rimsART-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.99, no.18, pp.181115 - 181117-
dc.identifier.wosid000296659400015-
dc.date.tcdate2019-01-01-
dc.citation.endPage181117-
dc.citation.number18-
dc.citation.startPage181115-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume99-
dc.contributor.affiliatedAuthorKim, JK-
dc.identifier.scopusid2-s2.0-80855128109-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.wostc15-
dc.description.scptc16*
dc.date.scptcdate2018-10-274*
dc.type.docTypeArticle-
dc.subject.keywordPlusQUANTUM EFFICIENCY-
dc.subject.keywordPlusGAN-
dc.subject.keywordPlusDIODES-
dc.subject.keywordPlusLEDS-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-

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김종규KIM, JONG KYU
Dept of Materials Science & Enginrg
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