DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jang, HW | - |
dc.contributor.author | Lee, JL | - |
dc.date.accessioned | 2015-06-25T01:23:32Z | - |
dc.date.available | 2015-06-25T01:23:32Z | - |
dc.date.created | 2009-10-08 | - |
dc.date.issued | 2009-05-04 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000019167 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9671 | - |
dc.description.abstract | Abnormal behavior of contact resistance with annealing in Ohmic contacts to laser-irradiated n-GaN is investigated. Ti/Al contacts on as-grown n-GaN shows no change in contact resistivity with annealing at the temperature range of 100-400 degrees C. However, the annealing results in the significant increase in contact resistivity in the contacts on laser-irradiated n-GaN. Synchrotron radiation photoemission study reveals the reduction of the concentration of donor-like N vacancies near the surface by the annealing. These results suggest that preventing the annihilation of N vacancies in the laser-irradiated n-GaN is important in improving the performance of vertical-structure GaN-based light-emitting diodes fabricated by laser lift-off. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Origin of the abnormal behavior of contact resistance in Ohmic contacts to laser-irradiated n-type GaN | - |
dc.type | Article | - |
dc.contributor.college | 신소재공학과 | en_US |
dc.identifier.doi | 10.1063/1.3133873 | - |
dc.author.google | Jang, HW | en_US |
dc.author.google | Lee, JL | en_US |
dc.relation.volume | 94 | en_US |
dc.relation.issue | 18 | en_US |
dc.contributor.id | 10105416 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.94, no.18 | - |
dc.identifier.wosid | 000265933700035 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.number | 18 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 94 | - |
dc.contributor.affiliatedAuthor | Lee, JL | - |
dc.identifier.scopusid | 2-s2.0-65549117395 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 11 | - |
dc.description.scptc | 13 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | P-TYPE GAN | - |
dc.subject.keywordPlus | METAL CONTACTS | - |
dc.subject.keywordPlus | LIFT-OFF | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordAuthor | annealing | - |
dc.subject.keywordAuthor | contact resistance | - |
dc.subject.keywordAuthor | gallium compounds | - |
dc.subject.keywordAuthor | III-V semiconductors | - |
dc.subject.keywordAuthor | impurity states | - |
dc.subject.keywordAuthor | laser beam effects | - |
dc.subject.keywordAuthor | light emitting diodes | - |
dc.subject.keywordAuthor | ohmic contacts | - |
dc.subject.keywordAuthor | photoelectron spectra | - |
dc.subject.keywordAuthor | semiconductor-metal boundaries | - |
dc.subject.keywordAuthor | synchrotron radiation | - |
dc.subject.keywordAuthor | vacancies (crystal) | - |
dc.subject.keywordAuthor | wide band gap semiconductors | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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