Polarization switching characteristics of BiFeO3 thin films epitaxially grown on Pt/MgO at a low temperature
- Polarization switching characteristics of BiFeO3 thin films epitaxially grown on Pt/MgO at a low temperature
- Ryu, S; Son, JY; Shin, YH; Jang, HM; Scott, JF
- Date Issued
- AMER INST PHYSICS
- An -oriented BiFeO3 (BFO) thin film having a pseudotetragonal symmetry was epitaxially grown on a Pt/MgO (001) substrate. The Pt-buffered MgO substrate enabled us to fabricate an epitaxial heterostructure at a temperature as low as 500 degrees C. We examined three major criteria for high-density ferroelectric memories using this BFO/Pt film capacitor. The polarization switching experiment has demonstrated that the film is electrically fatigue-free and possesses stable charge-retention characteristics with a reasonably large sensing margin of 22 mu C/cm(2). These suggest potential applicability of the present BFO/Pt heteroepitaxial film capacitor to nonvolatile memories.
- Article Type
- APPLIED PHYSICS LETTERS, vol. 95, no. 24, page. 242902-1 - 242902-3, 2009-12-14
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