Polarization switching characteristics of BiFeO3 thin films epitaxially grown on Pt/MgO at a low temperature
SCIE
SCOPUS
- Title
- Polarization switching characteristics of BiFeO3 thin films epitaxially grown on Pt/MgO at a low temperature
- Authors
- Ryu, S; Son, JY; Shin, YH; Jang, HM; Scott, JF
- Date Issued
- 2009-12-14
- Publisher
- AMER INST PHYSICS
- Abstract
- An [001]-oriented BiFeO3 (BFO) thin film having a pseudotetragonal symmetry was epitaxially grown on a Pt/MgO (001) substrate. The Pt-buffered MgO substrate enabled us to fabricate an epitaxial heterostructure at a temperature as low as 500 degrees C. We examined three major criteria for high-density ferroelectric memories using this BFO/Pt film capacitor. The polarization switching experiment has demonstrated that the film is electrically fatigue-free and possesses stable charge-retention characteristics with a reasonably large sensing margin of 22 mu C/cm(2). These suggest potential applicability of the present BFO/Pt heteroepitaxial film capacitor to nonvolatile memories.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9663
- DOI
- 10.1063/1.3275012
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 95, no. 24, page. 242902-1 - 242902-3, 2009-12-14
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