DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ryu, S | - |
dc.contributor.author | Son, JY | - |
dc.contributor.author | Shin, YH | - |
dc.contributor.author | Jang, HM | - |
dc.contributor.author | Scott, JF | - |
dc.date.accessioned | 2015-06-25T01:23:03Z | - |
dc.date.available | 2015-06-25T01:23:03Z | - |
dc.date.created | 2010-09-15 | - |
dc.date.issued | 2009-12-14 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 2015-OAK-0000020041 | en_US |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/9663 | - |
dc.description.abstract | An [001]-oriented BiFeO3 (BFO) thin film having a pseudotetragonal symmetry was epitaxially grown on a Pt/MgO (001) substrate. The Pt-buffered MgO substrate enabled us to fabricate an epitaxial heterostructure at a temperature as low as 500 degrees C. We examined three major criteria for high-density ferroelectric memories using this BFO/Pt film capacitor. The polarization switching experiment has demonstrated that the film is electrically fatigue-free and possesses stable charge-retention characteristics with a reasonably large sensing margin of 22 mu C/cm(2). These suggest potential applicability of the present BFO/Pt heteroepitaxial film capacitor to nonvolatile memories. | - |
dc.description.statementofresponsibility | open | en_US |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.rights | BY_NC_ND | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/2.0/kr | en_US |
dc.title | Polarization switching characteristics of BiFeO3 thin films epitaxially grown on Pt/MgO at a low temperature | - |
dc.type | Article | - |
dc.contributor.college | 첨단재료과학부 | en_US |
dc.identifier.doi | 10.1063/1.3275012 | - |
dc.author.google | Ryu, S | en_US |
dc.author.google | Son, JY | en_US |
dc.author.google | Scott, JF | en_US |
dc.author.google | Jang, HM | en_US |
dc.author.google | Shin, YH | en_US |
dc.relation.volume | 95 | en_US |
dc.relation.issue | 24 | en_US |
dc.relation.startpage | 242902-1 | en_US |
dc.relation.lastpage | 242902-3 | en_US |
dc.contributor.id | 10084272 | en_US |
dc.relation.journal | APPLIED PHYSICS LETTERS | en_US |
dc.relation.index | SCI급, SCOPUS 등재논문 | en_US |
dc.relation.sci | SCI | en_US |
dc.collections.name | Journal Papers | en_US |
dc.type.rims | ART | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.95, no.24, pp.242902-1 - 242902-3 | - |
dc.identifier.wosid | 000272954900043 | - |
dc.date.tcdate | 2019-01-01 | - |
dc.citation.endPage | 242902-3 | - |
dc.citation.number | 24 | - |
dc.citation.startPage | 242902-1 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 95 | - |
dc.contributor.affiliatedAuthor | Son, JY | - |
dc.contributor.affiliatedAuthor | Shin, YH | - |
dc.contributor.affiliatedAuthor | Jang, HM | - |
dc.identifier.scopusid | 2-s2.0-77955828283 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.wostc | 26 | - |
dc.description.scptc | 29 | * |
dc.date.scptcdate | 2018-10-274 | * |
dc.type.docType | Article | - |
dc.subject.keywordPlus | FERROELECTRIC MEMORIES | - |
dc.subject.keywordPlus | HETEROSTRUCTURES | - |
dc.subject.keywordPlus | NANOSCALE | - |
dc.subject.keywordPlus | PHYSICS | - |
dc.subject.keywordAuthor | bismuth compounds | - |
dc.subject.keywordAuthor | dielectric polarisation | - |
dc.subject.keywordAuthor | epitaxial growth | - |
dc.subject.keywordAuthor | epitaxial layers | - |
dc.subject.keywordAuthor | ferroelectric capacitors | - |
dc.subject.keywordAuthor | ferroelectric storage | - |
dc.subject.keywordAuthor | ferroelectric switching | - |
dc.subject.keywordAuthor | ferroelectric thin films | - |
dc.subject.keywordAuthor | sputter deposition | - |
dc.subject.keywordAuthor | thin film capacitors | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
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