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Effects of polymer gate dielectrics roughness on pentacene field-effect transistors SCIE SCOPUS

Title
Effects of polymer gate dielectrics roughness on pentacene field-effect transistors
Authors
Shin, KYang, CWYang, SYJeon, HYPark, CE
Date Issued
2006-02-13
Publisher
AMER INST PHYSICS
Abstract
The effects of the surface roughness of the polymer gate dielectrics on pentacene field-effect transistors were investigated. Using a poly(methylmethacrylate)/anodized Al2O3 dual-layer gate dielectric, the root-mean-square roughness of the gate dielectrics varied from 0.45 to 1.51 nm, independently of other gate dielectric properties such as the capacitance and surface energy. This range of root-mean-square roughnesses had little effect on the carrier mobility. X-ray diffraction analyses further revealed that the roughness of poly(methylmethacrylate) neither decreased the degree of crystallinity nor distorted the crystalline structure of pentacene.
URI
https://oasis.postech.ac.kr/handle/2014.oak/9550
DOI
10.1063/1.2176858
ISSN
0003-6951
Article Type
Article
Citation
APPLIED PHYSICS LETTERS, vol. 88, no. 7, 2006-02-13
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박찬언PARK, CHAN EON
Dept. of Chemical Enginrg
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