Effects of polymer gate dielectrics roughness on pentacene field-effect transistors
SCIE
SCOPUS
- Title
- Effects of polymer gate dielectrics roughness on pentacene field-effect transistors
- Authors
- Shin, K; Yang, CW; Yang, SY; Jeon, HY; Park, CE
- Date Issued
- 2006-02-13
- Publisher
- AMER INST PHYSICS
- Abstract
- The effects of the surface roughness of the polymer gate dielectrics on pentacene field-effect transistors were investigated. Using a poly(methylmethacrylate)/anodized Al2O3 dual-layer gate dielectric, the root-mean-square roughness of the gate dielectrics varied from 0.45 to 1.51 nm, independently of other gate dielectric properties such as the capacitance and surface energy. This range of root-mean-square roughnesses had little effect on the carrier mobility. X-ray diffraction analyses further revealed that the roughness of poly(methylmethacrylate) neither decreased the degree of crystallinity nor distorted the crystalline structure of pentacene.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/9550
- DOI
- 10.1063/1.2176858
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 88, no. 7, 2006-02-13
- Files in This Item:
-
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.